首页>
外国专利>
METHOD FOR MANUFACTURING A BACKSIDE ILLUMINATION OPTICAL SENSOR WITH IMPROVED DETECTION PARAMETERS
METHOD FOR MANUFACTURING A BACKSIDE ILLUMINATION OPTICAL SENSOR WITH IMPROVED DETECTION PARAMETERS
展开▼
机译:具有改进的检测参数的背面照明光学传感器的制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention relates to a method of manufacturing a backside illumination (BSI) CMOS optical sensor and more specifically to a method of reducing the cross talk and enhance the photon detection efficiency (PDE) in a backside illumination (BSI) CMOS optical sensor. In particular the claimed method comprises the step of creating an isolation structure between the adjacent sensing elements of the pixel-array of said BSI CMOS optical sensor, so as to isolate all the adjacent sensing elements from each other, and the step of creating a common voltage backside applying structure to all the sensing elements of said pixel-array, so as to connect all the sensing elements to a common voltage bias.
展开▼