SHORT-WAVE INFRARED DETECTOR AND ITS INTEGRATION WITH CMOS COMPATIBLE SUBSTRATES

摘要

The invention relates to a low temperature method of fabrication of short-wave infrared (SWIR) detector focal plane arrays (FPA) comprising a readout wafer, comprising a p-n junction, and an absorption layer that are connected for improved performances. The absorber layer comprises a SWIR conversion layer that has a GeSn or a SiGeSn alloy composition. A slightly doped buffer layer consisting of Ge or GeSn is situated between the readout wafer and the absorber layer. The slightly doped buffer layer comprises a crystallized layer in contact with said readout wafer. The method of the invention is based on a first series of process steps to realize a CMOS processed readout wafer. A slightly doped buffer layer is then transferred on said readout wafer, the slightly doped buffer layer comprising an interface layer, in contact with said readout wafer, is crystallized, by annealing, at temperatures compatible with the CMOS processed readout wafer, by applying short light source pulses on said interface layer so as to achieve a high quality crystalline interface layer. The method is based on assuring a temperature profile between the light entrance surface of the slightly doped buffer layer and the readout electronics so that the annealing temperature remains compatible with the CMOS structure. The slightly doped buffer layer is then used for further grow, on top of it, a GeSn or SiGeSn layer to create a SWIR light conversion layer and achieve the final structure of the SWIR FPA. The invention also relates to a SWIR FPA detector as realized by the method of the invention. The invention also relates to a SWIR detection system 3 comprising the SWIR detector array 1 of the invention and an waveguide array comprising at least two waveguides, The invention relates further to SWIR FPA applications such as a multi/hyperspectral LIDAR imaging systems.