Three-dimensional memory devices having a multi-stack bonded structure using a logic die and multiple three-dimensional memory dies and method of making the same

摘要

A first memory die including an array of first memory stack structures and a logic die including a complementary metal oxide semiconductor (CMOS) circuit are bonded. The CMOS circuit includes a first peripheral circuitry electrically coupled to nodes of the array of first memory stack structures through a first subset of first metal interconnect structures included within the first memory die. A second memory die is bonded to the first memory die. The second memory die includes an array of second memory stack structures. The CMOS circuit includes a second peripheral circuitry electrically coupled to nodes of the array of second memory stack structures through a second subset of first metal interconnect structures included within the first memory die and through second metal interconnect structures included within the second memory die. The logic die provides peripheral devices that support operation of memory stack structures in multiple memory dies.