SEMICONDUCTOR FILM

摘要

Provided is an α-Ga₂O₃ semiconductor film by which device yield can be significantly increased. The α-Ga₂O₃ semiconductor film is circular and has a main phase which is a crystal having a corundum type crystal structure comprising α-Ga₂O₃ or an α-Ga₂O₃-based solid solution. The maximum θ_max and the minimum θ_min for the off-angles at a center point X and at each of four outer periphery points A, B, C, and D on the surface of the semiconductor film satisfy the relationship θ_max - θ_min ≤ 0.30°. An off-angle is defined as the angle of inclination, relative to the semiconductor film surface normal, exhibited by a crystal axis that is oriented approximately in the normal direction of the semiconductor film. The outer periphery points A, B, C, and D are defined in such a manner that i) a straight line connecting the outer periphery point A to the outer periphery point C and a straight line connecting the outer periphery point B to the outer periphery point D intersect orthogonally at the center point X, and ii) the shortest distances from the outer edge of the semiconductor film to each of the outer periphery points A, B, C, and D are respectively 1/5 of the semiconductor film radius.