FILM FORMATION METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

Proposed is a film formation method for forming, on a substrate, an oxide film on which doping of bismuth is performed and which has characteristics of a semiconductor or a conductor. This film formation method has a step for heating the substrate and supplying, to the surface of the substrate, a mist of a solution which has dissolved therein a bismuth compound and an oxide film material containing constituent elements of the oxide film. By using the film formation method, it is possible to form, on a substrate, an oxide film on which doping of bismuth is performed and which has characteristics of a semiconductor or a conductor.