Method of fabricating hexagonal boron nitride

摘要

Disclosed is a method for producing hexagonal boron nitride in which hexagonal boron nitride is epitaxially grown at a relatively low temperature of 800°C or less. According to the disclosed embodiment, disposing a catalytic metal having a hexagonal crystal structure and having a lattice mismatch of 15% or less with a hexagonal boron nitride (h-BN) in a chamber; And growing a hexagonal boron nitride on the catalyst metal at a temperature of 800° C. or less while supplying a nitrogen source and a boron source into the chamber.