METHOD OF TREATING SILICON WAFERS TO HAVE INTRINSIC GETTERING AND GATE OXIDE INTEGRITY YIELD

摘要

The disclosure is directed to a single crystal silicon wafer comprising two major, parallel surfaces, one of which is a front surface and one of which is a back surface, a central plane between the front surface and the back surface, a circumferential edge joining the front surface and the back surface, a front surface layer having a depth, D, measured from the front surface and toward the central plane, and a bulk region is between the front surface layer and the central plane, wherein:the bulk region comprises oxygen precipitates at a density of at least about 1×107cm-3and a peak density of oxygen precipitates of at least about 1×109cm-3, wherein the peak density is between 10 micrometers and about 100 micrometers from the front surface of the single crystal silicon wafer;the front surface layer comprises oxygen precipitates at a density of less than about 1×107cm-3, wherein the depth, D, of the front surface layer is between about 1 micrometers and 10 micrometers; andthe front surface has no gate oxide integrity pattern related crystal defect bands.