SiC single crystal growth device, SiC single crystal growth method and SiC single crystal

摘要

PROBLEM TO BE SOLVED: To provide a single crystal growth apparatus capable of enlarging a bore diameter.SOLUTION: A single crystal growth apparatus according to the present embodiment comprises: a single crystal holding part having a protection face capable of protecting a first face of a single crystal and a second face opposed to the first face, and capable of clamping and holding said single crystal on said projection face; and a furnace body for covering the outer circumference of said single crystal holding part, as viewed in a first direction clamping said single crystal by said protection face; a material installation part disposed in said furnace body and on the outer side of a radial direction crossing said first direction from said single crystal holding part; and heating means for heating the outer side of said radial direction of said furnace body to a higher temperature than that of a central part. The single crystal held by said single crystal holding part can be subjected to a crystal growth toward the outer side of said radial direction.SELECTED DRAWING: Figure 2