COMPLEMENTARY ENHANCEMENT AND DEPLETION MOSFETS WITH COMMON GATE AND CHANNEL REGION, THE DEPLETION MOSFET ALSO BEING A JFET

摘要

A semiconductor device comprising a pair of FET's having a common electrode has operating characteristics similar to paired complementary FET's. In one embodiment of the invention the device functions as paired IGFET's, having a common gate electrode, and in a second embodiment the device functions to couple an IGFET to a JGFET.