首页> 外国专利> Retrofits in transducer device aperfeicoado to express how different values of resistance to different intensity of the field magnetically responsive.The head and process for manufacturing it and process for detecting in the form of magnetically recorded information fields.

Retrofits in transducer device aperfeicoado to express how different values of resistance to different intensity of the field magnetically responsive.The head and process for manufacturing it and process for detecting in the form of magnetically recorded information fields.

机译:对换能器设备aperfeicoado进行改造,以表达对不同强度磁场的不同电阻值的磁响应方式。磁头,磁头的制造过程以及以磁记录信息场的形式进行检测的过程。

摘要

A magnetic transducer exhibiting the magnetoresistive (MR) effect includes at least two thin film layers. An MR film in electrical control with a higher resistivity layer is magnetically biased by a portion of the MR sense current shunted through the nonmagnetic layer.
机译:表现出磁阻(MR)效应的磁换能器包括至少两个薄膜层。在电控制下具有较高电阻率层的MR膜会因通过非磁性层分流的MR感应电流的一部分而发生磁偏置。

著录项

  • 公开/公告号BR7307882D0

    专利类型

  • 公开/公告日1974-07-25

    原文格式PDF

  • 申请/专利权人 IBM CORP;

    申请/专利号BR19730788273

  • 发明设计人 BROCK G;SHELLEDY F;

    申请日1973-10-10

  • 分类号G11B5/30;

  • 国家 BR

  • 入库时间 2022-08-23 06:13:09

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