METHOD OF GROWING MOBILE POSITIVE ION FREE SiO{11 {11 FILMS

摘要

The present invention relates to a process for growing and annealing a silicon dioxide insulator layer to obtain a mobile positive ion free silicon dioxide insulator layer. A mobile positive ion free silicon dioxide insulator layer is required in order to make a stable insulated gate field effect transistor. The processing apparatus comprises a non-oxidizing, high-melting-point platinum metal film coated quartz furnace tube, potential means for placing a positive potential upon the platinum metal film coating of the platinum metal film coated quartz furnace tube to repel mobile ions therefrom, heater means for heating the interior of the quartz furnace tube, and gas means for passing oxygen gas through the platinum metal film coated quartz furnace tube. A silicon wafer may be oxidized in said processing apparatus to form a relatively mobile positive ion free silicon dioxide insulator layer of an insulated gate field effect transistor upon the silicon wafer. The silicon dioxide insulator layer is relatively uncontaminated by mobile positive ions which exist to the outside of the platinum metal film coated quartz furnace tube. A silicon wafer which previously has been coated by a silicon dioxide insulator layer may be processed to remove mobile ions within the silicon dioxide insulator layer. Mobile positive ions are repelled by the positive potential applied to the platinum metal film away from the outside of the quartz furnace tube, and mobile positive ions of the silicon dioxide insulator layer within the platinum metal film coated quartz tube are removed by the flowing oxygen gas due to the low vapor pressure of the mobile positive ions.