Aluminium-titanium gold semiconductor contact - with molybdenum, platinum or palladium below gold for higher strength

摘要

In a semiconductor device, esp. integrated semiconductor circuit with contacts suitable for use without wires, with an Al layer in contact with the semiconductor surface, then a Ti layer and an outer Au layer, there is a layer of Mo, Pt or Pd between the Ti and Au layers. Pref. the Mo or Pt layer is produced on the Ti layer by h.f. sputtering and the Pd layer by vapour deposition. The use of a Mo, Pt or Pd layer improves the mechanical strength and also prevents Au atoms penetrating to the Al layer.