A method for the production of homogeneously doped silicon single crystals, with n - conductance and adjustability of the dopant concentration by means of neutron irradiation

摘要

A B S T R A C TA method for producing homogeneously doped silicon monocrystals,with n-conductivity and adjustable dopant concentration, by the irradiationof silicon monocrystals with neutrons, starting with a pre-doped p- or n-conducting crystalline material having optional concentration fluctuationboth radially and axially.