Semiconductor optical radiation source - has tuned pn-junction bridged over by electrically conductive channel(s)

摘要

The semiconductor optical radiation source has at least one pn-junction whose radiation emitting power is tuned to a pre-Set value. This pn-junction is bridged over by at least one electrically conductive channel whose region is more highly doped as compared to the radiation active part of the pn-junction. Preferably the conductivity of the channel is inversely proportional to the mean effective rate of the pn-junction radiation active region. The radiation source is produce by applying a blocking voltage whose value is sufficient to effect an electric breakdown of the pn-junction. During this process blocking voltages of increased values are preferably used.