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MOSFET threshold switch system - has triggering level independent of trigger MOSFET threshold voltage by using six MOSFETs

机译:MOSFET阈值开关系统-通过使用六个MOSFET具有与触发MOSFET阈值电压无关的触发电平

摘要

The MOSFET threshold switch has its triggering level independent of the trigger MOSFETs' threshold voltage. The input signal is applied via an inverter to the trigger stage. The inverter consists of an input MOSFET (M1) with a second MOSFET (M2) forming its series load resistor. The trigger stage consists of two gate/drain cross coupled MOSFETs (M4, M5) forming a flip flop with an extra MOSFET (M6) acting as load resistor in the output drain circuit. The flip flop input drain circuit is connected via another load-resistor MOSFET (M3) to the output of the input MOSFET.
机译:MOSFET阈值开关的触发电平与触发MOSFET的阈值电压无关。输入信号通过反相器施加到触发级。逆变器由一个输入MOSFET(M1)和一个形成其串联负载电阻的第二个MOSFET(M2)组成。触发级由两个栅极/漏极交叉耦合的MOSFET(M4,M5)组成一个触发器,并带有一个额外的MOSFET(M6)作为输出漏极电路中的负载电阻。触发器输入漏极电路通过另一个负载电阻MOSFET(M3)连接到输入MOSFET的输出。

著录项

  • 公开/公告号DE2539911A1

    专利类型

  • 公开/公告日1977-03-17

    原文格式PDF

  • 申请/专利权人 SIEMENS AG;

    申请/专利号DE19752539911

  • 发明设计人 KESSLERHEINRICHDIPL.-PHYS.;

    申请日1975-09-08

  • 分类号H03K17/30;

  • 国家 DE

  • 入库时间 2022-08-23 00:04:43

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