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Method for fabrication of high minority carrier lifetime, low to moderate resistivity, single crystal silicon
Method for fabrication of high minority carrier lifetime, low to moderate resistivity, single crystal silicon
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机译:高少数载流子寿命,低至中等电阻率,单晶硅的制造方法
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摘要
A polycrystalline rod of silicon is refined by repeatedly passing it through a zone melt condition, then a dopant impurity is ion implanted in the polycrystalline rod and a seed crystal is attached. A final zone melt pass is then made converting the rod to single crystal structure and distributing the dopant.
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