首页> 外国专利> Amorphous magnetic layer and a process for the change in the direction more easily magnetization of a thin amorphous magnetic layer

Amorphous magnetic layer and a process for the change in the direction more easily magnetization of a thin amorphous magnetic layer

机译:非晶磁性层及其变化方向的处理更容易使薄的非晶磁性层磁化

摘要

P process of modifying the easy magnetization direction of a thin magnetic layer of amorphous / p & & p & said layer is subjected to annealing in an oxygen-free atmosphere, and is composed of a gas chosen from the group consisting of argon, neon, krypton and xenon, at a temperature lower than the crystallization temperature of the alloy constituting the layer. / p & & p & application to the bubble memories. / p
机译:

改变非晶态磁性薄层的易磁化方向的方法& &所述层在无氧气氛中进行退火,并且由选自氩,氖,k和氙的气体组成,该气体的温度低于构成该层的合金的结晶温度。 & &应用到泡沫记忆中。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号