首页> 外国专利> Integrated CMOS circuit for signal level control - has two MOS transistors with N and P channels connected in series, and diode biassing circuit between their gates

Integrated CMOS circuit for signal level control - has two MOS transistors with N and P channels connected in series, and diode biassing circuit between their gates

机译:用于信号电平控制的集成CMOS电路-具有两个N和P沟道串联连接的MOS晶体管,以及两个栅极之间的二极管偏置电路

摘要

The circuit is mounted at a junction between binary switching networks with low signal amplitude, such as TTL circuits, and switching circuits with large signal amplitudes, such as integrated CMOS circuits. It has an MOS transistor of the enrichment type. The channel transmission paths are connected in series between the terminals of a supply voltage source, and their junction point serves as the output. A diode circuit generating a constant voltage drop (U) and carrying a very small current in the /uA range is inserted between the gates of the two transistors (TN1, TP1). It shifts the input level at the transistor (TP1) gate w.r.t. the input signal lever, so that transistor (TP1) is reliably blocked by the input signal higher level.
机译:该电路安装在信号幅度较低的二进制开关网络(例如TTL电路)和信号幅度较大的开关电路(例如集成CMOS电路)之间的连接处。它具有浓缩型的MOS晶体管。通道传输路径串联连接在电源电压源的端子之间,并且它们的连接点用作输出。在两个晶体管(TN1,TP1)的栅极之间插入一个二极管电路,该二极管电路产生恒定的电压降(U),并在/ uA范围内传递很小的电流。它将晶体管(TP1)门上的输入电平移位。输入信号杠杆,以便晶体管(TP1)被输入信号高电平可靠地阻止。

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