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Promotion of epitaxial film growth - by forming stepped defect pattern on substrate surface

机译:促进外延膜生长-通过在基板表面形成阶梯状缺陷图案

摘要

Before an epitaxial film is produced on a substrate, many groups of spot or stepped defects are produced on the surface in such a way that their envelopes lie vertical to the substrate surface and parallel to the envelope of adjacent spot defects. The envelope distance is made 1 mu and the envelopes intersect pref. at an angle which is an integral multiple of pi/6. This controls the formation of nuclei and the growth and orientation of the film to reduce the presence of defects and to produce a film at moderate temps.
机译:在衬底上制造外延膜之前,以这样的方式在表面上产生许多组斑点或阶梯状缺陷,使得它们的包络线垂直于衬底表面并平行于相邻斑点缺陷的包络线。包络距离> 1μ,并且包络相交。的角度是pi / 6的整数倍。这控制了核的形成以及膜的生长和取向,以减少缺陷的存在并在中等温度下生产膜。

著录项

  • 公开/公告号FR2426496A1

    专利类型

  • 公开/公告日1979-12-21

    原文格式PDF

  • 申请/专利权人 MASSACHUSETTS INSTITUTE TECHNOLO;

    申请/专利号FR19780015337

  • 发明设计人

    申请日1978-05-23

  • 分类号B01J17/22;H01L21/20;

  • 国家 FR

  • 入库时间 2022-08-22 17:22:43

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