Methods of producing Schottky barrier silicide contacts on silicon subtrates and silicon semiconductor devices provided with Schottky barrier silicide contacts

摘要

Rare earth disilicide Schottky barriers are used as low resistance contacts (Schottky barrier of ≲0,4 eV) to n-type Si and high resistance contacts (Schottky barrier of 0,7 eV) to p-type Si. High (≳0,8 eV) and low (≲ 0,4 eV) energy Schottky barriers can be formed contemporaneously on an n-doped silicon substrate. Illustratively, the high energy Schottky barrier is formed by reacting platinum or iridium with silicon; the low energy Schottky barrier is formed by reacting a rare earth with silicon to form a disilicide. A composite layer of Pt on W is an effective diffusion barrier on Gd and prevents the Gd from oxidation.