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FET with interdigital structure - has semiconductor substrate on which elements of two electrodes are interdigitated

机译:具有叉指式结构的FET-具有半导体衬底,两个电极的元件在叉指上交指

摘要

The FET has electrodes on a plane surface, at least partly in the surface plane. Electrodes are divided in a series of secondary electrodes, inserted between secondary electrodes belonging to the other electrode. It has a semiconductor substrate with very high resistivity, and at least one series of secondary electrodes interconnected by conducting traces occupying a part of the substrate.
机译:FET具有在平面上的电极,至少部分在平面上。电极被分成一系列的次级电极,插入在属于另一个电极的次级电极之间。它具有电阻率非常高的半导体衬底,并且至少有一系列的次级电极通过占据衬底一部分的导电迹线互连。

著录项

  • 公开/公告号FR2464562B1

    专利类型

  • 公开/公告日1982-12-03

    原文格式PDF

  • 申请/专利权人 THOMSON CSF;

    申请/专利号FR19790021561

  • 发明设计人

    申请日1979-08-28

  • 分类号H01L29/76;H01L21/30;

  • 国家 FR

  • 入库时间 2022-08-22 10:01:31

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