Inverter circuit having transistors operable in a shallow saturation region for avoiding fluctuation of electrical characteristics

摘要

An inverter circuit which comprises a load transistor (Q.sub.1) and a driving transistor (Q.sub.2) is connected in series between first and second power supplies (V.sub.ss, V.sub.pp). At least one transistor (Q. sub.3) for reducing the load of the load transistor is connected between the load transistor and the second power supply (V.sub.pp). A bootstrap circuit is connected to the gate of the transistor (Q.sub.3) and the gate potential of the transistor (Q.sub.3) is raised to a potential level higher than that of the second power supply (V.sub.pp).