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still for framstellning of an epitaxial layer of a blykalkogenidt materials, a halvledaranordning including one layer and anvendning of such a halvledaranordning in a fotocelldetektor
still for framstellning of an epitaxial layer of a blykalkogenidt materials, a halvledaranordning including one layer and anvendning of such a halvledaranordning in a fotocelldetektor
A high temperature method for the preparation of single and multiple epitaxial layers of single-phase lead sulfide-selenide, [Pb]a[SxSe1-x]1-a wherein x varies between one and zero, inclusive, and a=0.500+/-0.003, deposited upon substrates of barium fluoride, BaF2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the substrate is exposed to the vapor emanating from the single chimney of a two-zone, dual-chamber furnace, thereby providing an epilayer of uniform, and predetermined electrical and optical properties.
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机译:一种制备单相硫化铅硒化物[Pb] a [SxSe1-x] 1-a的单层和多层外延层的高温方法,其中x在1和0之间(包括零)变化,且a = 0.500 + / -0.003,沉积在氟化钡BaF2的基底上,并与同时升华的铅合金和硫族化物源保持接近热力学平衡。在制备过程中,将基材暴露于两区双室炉的单烟囱发出的蒸汽中,从而提供均匀且预定的电学和光学特性的外延层。
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