首页>
外国专利>
METHOD OF MAKING INTEGRATED CIRCUITS EMPLOYING PROTON-BOMBARDED ALGAAS LAYERS
METHOD OF MAKING INTEGRATED CIRCUITS EMPLOYING PROTON-BOMBARDED ALGAAS LAYERS
展开▼
机译:制作集成质子轰击藻类层的集成电路的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
The property of materials in the GaAs/AlGaAs system, whereby at certain doses proton bombarded n-type material becomes highly resistive but p-type material remains highly conductive, is utilized to fabrication of integrated circuits which include buried semiconductor interconnections or bus bars between devices.
展开▼