study of the process of local doping with boron for silicon wafer

摘要

the invention concerns a coating process for boron doping source local silicon wafer used for the semiconductor jonctiunilor.the process according to the invention, consists in using as the cathode target placed at a facility.is in use as a cathode target placed at plumbing ceramic wafers of high purity boron nitrura with boron content greater than 41% for electronic use,discharge gas as argon, for wafers is subjected to a heat treatment at a temperature between 1175 in 1250 k, and finally chemical removal of the superficial layer deposited.