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REMOVAL OF MAGNETIC ANISOTROPY OF AMORPHOUS THIN FILM
REMOVAL OF MAGNETIC ANISOTROPY OF AMORPHOUS THIN FILM
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机译:去除非晶薄膜的磁各向异性
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摘要
PURPOSE:To obtain a magnetic material having a good permeability and to enable the removal of magnetic anisotropy without opening the vacuum bath, by a method wherein in generating an insulating film on an amorphous thin film of the metal-metal system by a sputter method, a rotating magnetic field is applied on the amorphous thin film. CONSTITUTION:When an insulating film is generated by sputter method on a metal-metal system amorphous thin film A generated by a sputter method, a rotating magnetic field H is applied on the amorphous thin film A. Then a board 4 to which a target is attached is rotated to place Al2O3 (target 7) in a position opposed to a substrate G, a rotating base 1 is rotated and simultaneously therewith a magnetron source 3 is operated, thereby applying a magnetic field in parallel with the planes of the substrate G mounted on the rotating base 1 and of the amorphous thin film A. And when a shutter 8 is opened, due to the rotation of the applied energy and the rotating base 1, an insulating film B is produced while the induced magnetic anisotropy is removed. With this, the magnetic anisotropy of the amorphous thin film A can be removed simultaneously with the production of the insulating film B, and in addition without necessitating the temperature rise of the amorphous thin film A.
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机译:用途:为了获得一种具有良好导磁率的磁性材料,并能够在不打开真空浴的情况下消除磁各向异性,该方法是在通过溅射法在金属-金属系统的非晶薄膜上生成绝缘膜的过程中,在非晶薄膜上施加旋转磁场。组成:当通过溅射法在通过溅射法产生的金属-金属系统非晶薄膜A上产生绝缘膜时,旋转磁场H施加在非晶薄膜A上。旋转连接器以将Al 2 O 3(靶7)放置在与衬底G相对的位置,旋转基座1,同时操作磁控管源3,从而施加与安装的衬底G的平面平行的磁场并且,当开闭器8打开时,由于施加的能量和旋转基体1的旋转,在除去感应磁各向异性的同时产生绝缘膜B。这样,可以在制造绝缘膜B的同时消除非晶薄膜A的磁各向异性,并且此外,不必使非晶薄膜A的温度升高。
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