seen for the manufacture of an integrated halvledaranordning with the epitaxial tillvexten divided in three distinct steps, stabilised at three different temperatures

摘要

In a method for producing an integrated semiconductor device which contains a vertical epitaxial planar NPN bipolar transistor and isolation columns on an epitaxially grown P-type substrate 1 of (100) orientation, a layer is provided which comprises semiconducting regions of polycrystalline silicon for isolation zones 7 and collector connector zones 8, and monocrystalline type silicon for the remaining parts. The polycrystalline and epitaxial layers are grown in three separate stages using chemical vapour deposition. In the first stage, collector connector zones 8 and isolation zones 7 are grown to a thickness of about 6000 ANGSTROM -8000 ANGSTROM , Fig. 5, at a growth rate of about 1 000 ANGSTROM /minute. The second layer extends beyond the areas already grown in the first stage to the remaining areas of the substrate, Fig. 6, to produce a layer 10 of about 30,000 ANGSTROM , thickness, at a growth rate of 2000 to 3000 ANGSTROM /minute. In the third growth stage, Fig. 7, a layer 12 is grown at a rate of 10,000 to 15,000 ANGSTROM /minute. IMAGE