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Method for forming oxide isolation films on french sidewalls
Method for forming oxide isolation films on french sidewalls
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机译:在法国侧壁上形成氧化物隔离膜的方法
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摘要
In a method according to the present invention for forming isolation oxide films (14) on a silicon substrate (11) having trenches and islands bounded by the trenches, the isolation oxide films are simultaneously formed in the island regions and in the side wall regions of the trenches by oxidizing the substrate (11) with a single patterned oxidation mask (12).
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