PURPOSE:To accurately detect the degree of mask alignment displacement without increasing the occupying area on a semiconductor wafer by forming the opposed areas of 2-layer conductive films so as to sequentially displace it without increasing the number of patterns of the films. CONSTITUTION:L1 and L2 are first and second layer conductive films formed as vernier pattern in an insulating film 2, and both are opposed through an interlayer insulating film 2'. The film L1 is so formed that a plurality (5 in this example) of conductive film patterns 3,.. having a pattern of predetermined width w (e.g., 1.0mum) are laterally arranged at a predetermined pitch P1. The film L2 is so formed that a plurality (5 in this example) of conductive film patterns 4,.. having a pattern of a predetermined width W are laterally arranged at a predetermined pitch P2 different from the pitch P1.
展开▼
