METHOD FOR GROWING COMPOUND SEMICONDUCTOR BY HORIZONTAL BRIDGMAN TECHNIQUE

摘要

PURPOSE:To grow a compd. semiconductor with a lower dislocation density than before by the horizontal Bridgman technique by covering a molten raw material with a liq. sealant, controlling the temp. change of the melt, and specifying the temp. gradient of the melt in the vicinity of the sold-liq. interface. CONSTITUTION:The molten raw material is covered with the liq. sealant consisting of B2O3, etc., hence the flow on the upper surface of the molten raw material is controlled, and the temp. change of the melt is controlled. The temp. gradient in the vicinity of the solid-liq. interface of melt is adjusted by the output of a heater, and controlled to =1 deg.C/cm. As a result, the dislocation defect density in the crystal can be kept lower than before. Accordingly, the compd. semiconductors of GaAs, GaSb, etc., having above-mentioned characteristics are advantageously grown by the horizontal Bridgman technique.