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Inner self-testing and redundancy programming - carries out inner programming of redundancy bit or word coders, corresp. to determined redundancy structure

机译:内部自检和冗余编程-对冗余位或字编码器进行内部编程。确定冗余结构

摘要

The programming for memory circuits permits starting an internal self-tutoring of the memory, on application of an operational voltage and attaining an inner stability. According to the determined redundancy structure, an internal programming of redundancy bit decoders (6) or redundancy word coders (7) is carried out. The included associative memory cells (30) in the coders are allocated to bit (2.4), or word lines (2.5). During the redundancy programming, at the self-test start, a reset redundance validity FF (33) is adjusted. The positive end of the self-test releases blocked control inputs and possibly a signal at an output pin (MR). With a faultless memory matrix (2), an irreversible memory element (25) is programmed. ADVANTAGE - No atypical conditions on programming of redundant lines.
机译:存储器电路的编程允许在施加工作电压并获得内部稳定性时启动存储器的内部自学习。根据确定的冗余结构,执行冗余位解码器(6)或冗余字编码器(7)的内部编程。编码器中包括的关联存储器单元(30)被分配给位(2.4)或字线(2.5)。在冗余编程期间,在自检开始时,会调整复位冗余有效性FF(33)。自检的正端释放阻塞的控制输入,并可能释放输出引脚(MR)上的信号。利用无故障的存储矩阵(2),对不可逆的存储元件(25)进行编程。优势-冗余线路的编程没有非典型条件。

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