PRODUCTION OF THIN BI-TYPE SUPERCONDUCTING OXIDE FILM HAVING HIGH CRITICAL TEMPERATURE AND HIGH CRITICAL CURRENT DENSITY

摘要

PURPOSE:To obtain a thin Bi-type superconducting oxide film having high critical temperature and high critical current density by forming a thin Sb film and a thin Pb film into multilayered state on the surface of a conventional thin Bi-Sr-Ca-Cu-O oxide superconductor film and then applying heat treatment to the above under specific conditions. CONSTITUTION:After a thin Bi-Sr-Ca-Cu-O oxide film of 1.0mum thickness is formed on the surface of an MgO single crystal substrate by a sputtering method, a thin multilayered film consisting of a thin Sb film end a thin Pb film having 0.05mum thickness, respectively, is further formed on the above by a sputtering method. The substrate on which the above thin multilayered film is formed is heat-treated in an oxidizing atmosphere consisting of a gaseous mixture of O2 gas and Ar gas, e.g., at 800-900 deg.C. By this method, the thin Bi-type superconducting oxide film excellent in surface smoothness and having high critical temperature and high critical current density can be obtained.