METHOD OF SURFACE RESISTANCE MEASURING BY MEANS OF TWO-IMPLANTATION METHOD

摘要

The solution concerns ion implantation technology used in the production of semiconductor components. It solves a method of measuring surface resistance in measuring homogeneity of implanted doses lower than 1013 cm-2 on the principle of a two-implant diode for devices with the electrostatic sweeping of the ion cluster. The principle consists in the use of reference testing plates from a given group for evaluation of the first dose (D11, D12) of the ion implantation. The surface resistance on other testing plates from the group after the second dose (D2) of the ion implantation made through a layer of SiO2 is measured and evaluated after the etching of SiO2. As a base for calculation of the value delta IMAGE values of the surface resistance R1 are taken, measured on reference plates after the first implantation and also the values of the surface resistance R2 on the testing plates after the second implantation. The SiO2 layer ensures the suppressing of ion channelling during implantation and its removal and the measuring of surface resistance with a 4-probe.IMAGE