Method for improving step coverage of a metallization layer on an integrated circuit by use of a high melting point metal as an anti- reflective coating during laser planarization

摘要

A method for improving step coverage of metallization layers of an aluminum alloy on an integrated circuit involves use of a deposited layer of a high melting point metal, such as tungsten or an alloy of tungsten and titanium, as an anti-reflective coating (ARC) to increase the efficient use of laser energy for planarization purposes where the underlying aluminum alloy covers a step, such as at an open via.