METHOD FOR CARRYING OUT VAPOR PHASE EPITAXY OF GAASP MIXED CRYSTAL

摘要

PURPOSE:To obtain a good mixed crystal reduced in pyramid-like defects and point defects by limiting growth temperature in the vicinity of a substrate in vapor phase epitaxy of GaAsP mixed crystal by a chloride CVD method. CONSTITUTION:When a GaAs single crystal substrate 5 is arranged in a reacting tube 1 and PCl3 gas 3a and AsCl3 gas 3b are fed into the reacting tube 1 and a GaAs1-xPx mixed crystal layer is grown on a substrate 5, growing temperature is controlled so as to satisfy temperature conditions expressed by the equation 500x+585=T=500x+605 when the growing temperature in the vicinity of the substrate 5 is T ( deg.C).