Semiconductor film analogue investigation method for duration wave HFETs mfr. - evaluating photoluminescence spectrum to identify high charge carrier density component rates

摘要

The method takes a photoluminescence spectrum of the semiconducting layer structure after manufacture of the component plates. The energy band interval of the spectrum is compared with the two=dimensional state density of a suitable referernce curve and the charge carrier density of the hetero-structure quantum wave derived directly from it. The HFET is finally manufactured. USE/ADVANTAGE - Enables suitable component plates, i.e. those with high charge carrier density in conducting channel, to be rapidly and simply identified.