HETEROEPITAXIAL GROWTH OF AL2O3 SINGLE CRYSTAL FILM ON SI SUBSTRATE BY REDUCE PRESSURE VAPOR GROWTH

摘要

PURPOSE:To readily form an electrical insulating film of excellent electrical properties and stability in high-temperature heat treatment, by heating to a specified temperature a Si substrate set up in a reduced pressure vapor growth unit and by introducing Al(CH3)3 and N2O gases thereon. CONSTITUTION:A Si substrate set up in a reduced pressure vapor growth unit is heated to 950-1100 deg.C by high-frequency induction heating, and a raw material gas as a reaction gas, made up of Al(CH3)3 and N2O gases put to bubbling with N2 gas and, if needed, a N2 diluent gas are introduced into this unit, and the pressure in the unit is reduced to e.g., 30Torr, and then the objective a gamma-Al2O3 single crystal electrical insulating film is grown on the Si substrate.