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ONE-FACE POLISHING METHOD OF SILICON WAFER BY BOTH-FACE POLISHING MACHINE

机译:双面抛光机对硅片进行单面抛光的方法

摘要

PURPOSE: To enable planar working of high precision and high smoothness by hydrophilically treating each surface of two silicon wafers, by adhering and sticking these surfaces, and by polishing both outside surfaces. ;CONSTITUTION: The respective etching surfaces 1a, 2a of two silicon wafers 1, 2 so ground and etched as to be TTV2μm, LTV1μm or less in a class 1 clean room are hydrophilically treated with the result that these surfaces 1a, 2a are adhered. The silicon wafers 1, 2 are clamped by surface plates 14, 16. Next, while a liquidlike polishing agent is supplied continuously to polish cloths 13, 15, the surface plates 14, 16 are rotated to polish unetched surfaces 1b, 2b of the silicon wafers 1, 2. This process enables planar working of high precision and high smoothness without using wax.;COPYRIGHT: (C)1993,JPO&Japio
机译:目的:通过亲水处理两个硅晶片的每个表面,粘附和粘贴这些表面以及抛光两个外表面,以实现高精度和高平滑度的平面加工。组成:在第1级洁净室中研磨并蚀刻成TTV2μm,LTV1μm或更小的两个硅晶片1、2的各个蚀刻表面1a,2a经过亲水处理,结果粘附了这些表面1a,2a。硅晶片1、2被表面板14、16夹持。接下来,在将液体状的抛光剂连续地供给到抛光布13、15的同时,旋转表面板14、16以抛光硅的未蚀刻表面1b,2b。晶片1、2。此工艺无需使用蜡即可实现高精度和高平滑度的平面加工。;版权所有:(C)1993,日本特许厅&日本apio

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