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CRYSTAL GROWTH OF MERCURY CADMIUM TELLURIDE

机译:碲化镉镉晶体的生长

摘要

PURPOSE:The starting melt is covered with a mixture containing a specific plurality of chlorides to effect crystal growth to form mercury cadmium telluride in good reproducibility under suppression of evaporation of mercury. CONSTITUTION:A base plate 2 of CdTe is placed on the depression of the holder 1 made of carbon and fine particles of Hg2Te, CdTe and Te are placed in the melt pit 4 in the carbon slide port 3 so that the their proportion satisfies the composition of the formula. Then, a mixture of plural halides 5 whose melting point is lower than that of the starting melt is placed on the granules so that the components with lower vapor pressure become more than the higher components. Then, they are heated at 510 deg.C which is high than 500 deg.C, the melting point of the starting material, in an electric furnace to melt the mercury cadmium telluride and the halide mixture in a H2 gas atmosphere so that the melt 6 is covered with the liquefied halide mixture 5. Then, they are rapidly cooled down to 490 deg.C to make the melt 6 in the super-cooling state, and the slide board 3 is allowed to move so that the crystal is allowed to grow on the base 2.
机译:目的:用含有特定多种氯化物的混合物覆盖起始熔体,以实现晶体生长,从而在抑制汞蒸发的同时,以良好的重现性形成碲化镉汞。组成:将CdTe基板2放在由碳制成的支架1的凹槽中,并将Hg2Te,CdTe和Te的细小颗粒放入碳滑动口3的熔池4中,以使它们的比例满足要求的公式。然后,将熔点低于起始熔体的熔点的多种卤化物5的混合物置于颗粒上,使得具有较低蒸气压的组分变得高于较高组分。然后,将它们在电炉中在高于原料熔点的500℃(510℃)下加热,以在H2气体气氛中熔化碲化汞镉和卤化物混合物,从而使熔体熔化。图6中的混合物被液化的卤化物混合物5覆盖。然后,将它们迅速冷却至490℃,以使熔体6处于过冷状态,并且使滑板3移动,从而使晶体移动。在基础上成长2。

著录项

  • 公开/公告号JPH0481558B2

    专利类型

  • 公开/公告日1992-12-24

    原文格式PDF

  • 申请/专利权人 NIPPON ELECTRIC CO;

    申请/专利号JP19860055676

  • 发明设计人 FUJINO YOSHIO;

    申请日1986-03-12

  • 分类号C30B27/00;C30B19/00;C30B29/48;H01L21/208;

  • 国家 JP

  • 入库时间 2022-08-22 05:13:25

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