STATIC INDUCTION DIODE HAVING BURIED STRUCTURE OR CUT-IN STRUCTURE

摘要

PURPOSE: To shorten a reverse recovery time by setting static induction short- circuit regions on the anode side and the cathode side. ;CONSTITUTION: An anode region of a width W_p is provided with a p^- high resistance layer 31, a p⁺ buried layer 30, a p anode region 3 and an n⁺ static induction short-circuit layer 4, while a cathode region of a width W_n is provided with an n^- high resistance layer 61, an n⁺ buried layer 60, an n cathode region 6 and a p⁺ static induction short-circuit layer 7. Holes injected from 3, 30 and 31 of the anode region are absorbed in the static induction short-circuit region 7 on the cathode side, while electrons injected from 6, 60 and 61 of the cathode region are absorbed in the short-circuit region 4 on the anode side. By setting the lifetime of the vicinities of both of the anode region and the cathode region to be long and by setting a lifetime distribution in the high resistance layers to be short relatively, an electrostatic induction effect in the vicinities of both of the regions can be increased, Carriers remaining in the high resistance layers can be made extinct in a relatively short time due to the lifetime set to be short, and thus a reverse recovery time can be shortened.;COPYRIGHT: (C)1994,JPO&Japio