Thin film transistor (TFT) structure and leakage current reduction method

摘要

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film transistor (TFT) structure, and more particularly, to a thin film transistor which is capable of suppressing leakage current flowing through a back channel of a thin film transistor by depositing a nitride film on the thin film transistor channel polysilicon To the structure of a transistor. In order to achieve the above object, there is provided a thin film transistor having a gate and a gate oxide film on a substrate and a source polysilicon film formed on the gate oxide film to form a source / drain, The leakage current flowing at the third interface, which is the junction of the channel polysilicon and the nitride film, is reduced.