Fast-switching semiconductor junction device mfr. by double diffusion - by partial or total dissociation of iron-gold complexes during tempering at e.g. 300 deg.C to shorten carrier lifetime

摘要

A diode with a blocking voltage greater than 1 kV is formed from a heavily-doped p-type layer (1), a lightly-doped n-type layer (2) forming a p-n junction (4), and a heavily-doped n-type layer (3) with a 10 nm thick Au film (5) vapour-deposited on its surface and diffused homogeneously e.g. for one hour at 900 deg.C. A layer (6) of Fe is sputtered on to the p+ layer (1) and diffused by rapid thermal annealing to produce an increased impurity concn. below the junction. ADVANTAGE - Carrier lifetime can be reduced greatly in desired part of lightly-doped region for very effective inhomogeneous impurity distribution profile with optimal switching properties.