Semiconductor device with multilevel interconnect structure - comprises etch preventing film between inter level insulation layers of poly:phenyl silsequioxane with openings, and interconnect layers, avoiding recess formation

摘要

The device has (i) a first insulation layer (2) with a first opening (a), formed on a semiconductor substrate; (ii) a first etch preventing film (3) polyphenyl silsesquioxane film, formed on the layer; (iii) a first interconnect layer (4) formed in the first opening; (iv) a second insulation layer (5) with a second opening (b,c), formed on the etch preventing film and the first interconnect layer; and (v) a second interconnect layer (7) formed in the second opening and electrically connected to the first interconnect layer. The second opening pref. comprises a via contact opening (b) of relatively small inside dia. and an interconnect opening (c) of relatively large dia.. A combination of an etch preventing film (6), an insulation layer and an interconnect layer may also be formed on the second insulation layer (5). ADVANTAGE - The etch preventing film avoids recess formation in the first insulation film even on faulty pattern alignment during foramtion of the second opening in the second insulation film.