首页> 外国专利> MOLECULAR BEAM SOURCE CELL, MOLECULAR-BEAM EPITAXIAL GROWTH DEVICE AND MOLECULAR-BEAM EPITAXIAL CROWTH

MOLECULAR BEAM SOURCE CELL, MOLECULAR-BEAM EPITAXIAL GROWTH DEVICE AND MOLECULAR-BEAM EPITAXIAL CROWTH

机译:分子束源细胞,分子束外延生长装置和分子束外延生长

摘要

PURPOSE: To provide molecular beam source cells, which are respectively always capable of measuring the intensity of a molecular beam, which is generated in each molecular beam source cell during the formation of a thin film, in every molecular beam source cell, and a molecular-beam epitaxial growth device. ;CONSTITUTION: An intensity-of-molecular-beam measuring device 22 is attached to each molecular beam source cell 20. molecular-beam epitaxial growth device is provided with the cells 20, which are respectively mounted with each device 22. It is desirable that the growth device is further provided with a control mechanism for controlling the intensities of molecular beams, which are emitted from the cells 20, on the basis of the intensities of the molecular beams measured by the devices 22. Each device 22 can be constituted of an ion gauge type measurer or a resistance wire.;COPYRIGHT: (C)1995,JPO
机译:目的:提供分子束源单元,其分别总是能够测量在形成薄膜时在每个分子束源单元中,在每个分子束源单元中以及分子中产生的分子束的强度。 -束外延生长装置。 ;组成:分子束强度测量装置22附接到每个分子束源单元20。分子束外延生长装置设置有单元20,单元20分别安装在每个单元22上。该生长装置还具有控制机构,该控制机构基于由装置22测量的分子束的强度来控制从细胞20发射的分子束的强度。每个装置22可以由一个离子规式测量仪或电阻丝。;版权:(C)1995,JPO

著录项

  • 公开/公告号JPH07106251A

    专利类型

  • 公开/公告日1995-04-21

    原文格式PDF

  • 申请/专利权人 SONY CORP;

    申请/专利号JP19930274997

  • 发明设计人 IKEDA MASAO;

    申请日1993-10-06

  • 分类号H01L21/203;C30B23/08;

  • 国家 JP

  • 入库时间 2022-08-22 04:24:01

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