METHOD FOR GROWING SI SINGLE CRYSTAL WITH RADIALLY UNIFORM IMPURITY CONCENTRATION DISTRIBUTION

摘要

PURPOSE: To obtain, through Czochralski process, a Si single crystal uniformized in impurity concentration distribution in its radial direction. CONSTITUTION: When a Si single crystal is pulled up from a Si melt added with Ga or Sb through Czochralski process, element(s) capable of increasing the thermal expansion coefficient of the melt in the vicinity of its melting point (at least one kind of element selected from between B and P) is further added to the melt. As the result, agitation of the melt just under the growth interface can be promoted, and as the Si single crystal is pulled up from the melt uniformized in impurity concentration distribution, the Si single crystal uniform in impurity concentration distribution in its radial direction can be grown.