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MEMORY CELL, FLASH EEPROM, METHOD FOR ERASING MEMORY CELL AND METHOD FOR CONTROLLING FLASH EEPROM MEMORY CELL
MEMORY CELL, FLASH EEPROM, METHOD FOR ERASING MEMORY CELL AND METHOD FOR CONTROLLING FLASH EEPROM MEMORY CELL
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机译:存储器单元,闪存EEPROM,擦除存储器单元的方法和控制闪存EEPROM存储器单元的方法
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摘要
PURPOSE: To erase an EEPROM with low power consumption by applying required voltages, respectively, to a source region and a control gate thereby bringing a drain region and a substrate into floating state. ;CONSTITUTION: When a memory cell 212 in EEPROM is erased, +12V is applied to a source region 26' through a switch SWS and a control gate 40 is grounded through a switch SW-G. A first P type substrate 22 and a drain 24 are impeded through switches SW-snb, SW-D and brought into floating state. Consequently, electrons 60 stored in a gate 38 migrate to the region of source 26' through Fowler-Nordhem tunneling caused by a field established between the gate 40 and source 26' and the cell 26' is erased. In this regard, a substrate 22' is floated to reduce the source current and a charge pump for negative charge can be eliminated resulting in erasure of flash EEPROM with low power consumption.;COPYRIGHT: (C)1996,JPO
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