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High tension suitsuchi

机译:住友喜住

摘要

PURPOSE:To obtain a titled switch withstanding a high voltage and generating no current branch by using a field effect transistor (FET) as a switch element and using a photocoupler having a photo thyristor, whose high voltage widthstanding type is easily attained, as a control element. CONSTITUTION:An FET 10 used as the switch element is connected between terminals 51 and 52. A photocoupler 11 used as the control element consists of a photo thyristor 11A and a light emitting diode 11B. The photo thyristor 11A is connected between a drain terminal D and a gate terminal G of the FET 10, and the light emitting diode 11B is fed from a control power bus 55 through a resistor 56; and when a closing switch 13 is made, a current flows to the light emitting diode 11B to emit light, and the photo thyristor 11A is turned on. A resistor 12 is set to such high resistance value that the current flowing through the resistor 12 is lower than te holding current of the photo thyristor 11A.
机译:目的:通过使用场效应晶体管(FET)作为开关元件,并使用具有光晶闸管的光耦合器来获得耐高压且不产生电流分支的带标题的开关,该光耦合器的耐压宽度宽型容易实现。元件。构成:用作开关元件的FET 10连接在端子51和52之间。用作控制元件的光电耦合器11由光电晶闸管11A和发光二极管11B组成。光电晶闸管11A连接在FET 10的漏极端子D和栅极端子G之间,并且发光二极管11B通过电阻器56从控制电源总线55馈送;当闭合开关13闭合时,电流流向发光二极管11B发光,并且光电晶闸管11A导通。将电阻器12设置为高电阻值,以使得流过电阻器12的电流低于光电晶闸管11A的保持电流te。

著录项

  • 公开/公告号JP2510987B2

    专利类型

  • 公开/公告日1996-06-26

    原文格式PDF

  • 申请/专利权人 TOKYO SHIBAURA ELECTRIC CO;

    申请/专利号JP19860058922

  • 发明设计人 HANAI HIROKORE;TAI ICHIRO;

    申请日1986-03-17

  • 分类号H03K17/78;G01T1/185;H01H33/59;H02M1/08;

  • 国家 JP

  • 入库时间 2022-08-22 03:57:24

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