SEMICONDUCTOR STORAGE DEVICE, INTERNAL POWER SUPPLY VOLTAGE GENERATING CIRCUIT, INTERNAL HIGH VOLTAGE GENERATING CIRCUIT, INTERMEDIATE VOLTAGE GENERATING CIRCUIT, CONSTANT CURRENT SOURCE AND REFERENCE VOLTAGE GENERATING CIRCUIT

摘要

PURPOSE: To obtain a semiconductor storage device operating stably with a low power consumption. ;CONSTITUTION: This semiconductor storage is provided with an internal power source voltage generating circuit 4 generating first and second internal power source voltages by lowering an internal power source voltage. a Vpp generating circuit 5 generating a high voltage from an external power source voltage by a charge pumping operation and a Vbb generating circuit 3 generating a negative voltage from the external power source voltage by a charge pumping operation. The first internal power source voltage is applied to a control circuit 7 and a sense-amplifier driving signal generating circuit 6. The second internal power voltage is applied to a circuit 9 generating a bit equalizing/precharging signal. Even in the case the first internal power source voltage is made lower, the Vpp generating circuit 5 and the Vbb generating circuit 3 generate effectively and stably a prescribed internal high voltage and a prescribed negative voltage to generate a prescribed voltage from the external power source voltage. Moreover, since the voltage level of the bit line equalizing/precharging signal is higher than the first internal power source voltage, the equalizings/prechargings of bit lines can be performed at high speed.;COPYRIGHT: (C)1996,JPO