AUXILIARY PATTERN TYPE PHASE SHIFT MASK, SHIFTER EDGE TYPE PHASE SHIFT MASK, AND PATTERN TRANSFER METHOD

摘要

PURPOSE: To provide a phase shift mask for pattern transfer in which the generation of unnecessary patterns and unresolved patterns in resist patterns for forming gate electrodes is prevented and the easy and stable formation of semiconductor devices is possible. CONSTITUTION: Junctures 161 of very small light transmissive patterns 162 for gate fingers and large-area light transmissive patterns for gate pads are formed into a tapered shape of an angle θ(exclusive of 90 deg.). Further, parts 164 including the extreme end parts 163 of the auxiliary patterns 16a, 16b (SiO2 films) where the phase of exposing light is inverted 180 deg. are bent at the angle θalong the tapered shape of the junctures 161. As a result, the concentration of the exposing light transmitting the extreme ends 163 is relieved and the intensity of the exposing light is lowered. The unnecessary patterns occurring in the auxiliary patterns 16a, 16b are not generated in the resist patterns obtd. by subjecting the resist films to exposure and development processing by using this phase shift mask 16.