Process for the production of an optoelectronic semiconductor device by etching a semiconductor body with a top layer of GaAs and a lower layer of InP in a plasma produced in SiCl4 and Ar

摘要

A method of manufacturing an optoelectronic semiconductor device whereby a surface (1) of a semiconductor (2) built up from a number of layers of semiconductor material (4, 5, 6, 7) grown epitaxially on a semiconductor substrate (3), with a top layer (4) of GaAs adjoining the surface (1) and a subjacent layer (5) comprising InP, in particular made of (AlxGa1-x)yIn1-yP with 0,5 x 0,8 and 0,4 y 0,6, is provided with an etching mask (8), after which the top layer (4) and the subjacent layer (5) are locally etched in a plasma generated in a gas mixture comprising SiCl4 and Ar. According to the invention, CH4 is added to the gas mixture in which the plasma is generated. This measure leads to the creation of a smooth surface during etching of both layers, and in particular during etching of the layer comprising InP. The walls (10) of the ridge (9) formed in the layers are also smooth and steep. IMAGE